Frontier Hot Spot and Innovation Trend of Infrared Photoelectric Detector

Recently, the research group of Ye Zhenhua, professor of Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, published a review article on "Frontiers of infrared photoelectric detectors and innovation Trend" in the journal of Infrared and Millimeter-wave.

This study focuses on the research status of infrared technology at home and abroad, and focuses on the current research hotspots and future development trends of infrared photoelectric detectors. First, the concept of SWaP3 for tactical ubiquity and strategic high performance is introduced. Secondly, the advanced third-generation infrared photodetectors with ultra-high spatial resolution, ultra-high energy resolution, ultra-high time resolution and ultra-high spectral resolution are reviewed, and the technical characteristics and implementation methods of infrared detectors that challenge the limit of light intensity detection capability are analyzed. Then, the fourth-generation infrared photoelectric detector based on artificial micro-structure is discussed, and the realization approaches and technical challenges of multi-dimensional information fusion such as polarization, spectrum and phase are mainly introduced. Finally, from the perspective of on-chip digital upgrade to on-chip intelligence, the future revolutionary trend of infrared detectors is discussed.

With the development of Artificial intelligence of Things (AIoT) trend is rapidly popularized in various fields. Composite detection and intelligent processing of infrared information is the only way for infrared detection technology to be popularized and developed in more fields. Infrared detectors are developing from a single sensor to multi-dimensional information fusion imaging and intelligent infrared photoelectric detectors on the chip. Based on the fourth generation of infrared photodetectors integrated with artificial microstructures of light field modulation, a transformative infrared photodetector for on-chip infrared information acquisition, signal processing and intelligent decision making is developed by 3D stacking. Based on the on-chip integration and intelligent processing technology, the new intelligent information processing photodetector has the characteristics of on-chip pixel calculation, parallel output and low power consumption based on event-driven, which can greatly improve the parallel, step calculation and intelligent level of feature extraction and other photoelectric detection systems.


Post time: Mar-23-2022